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kh-ch7-stack1

Quiz yourself by thinking what should be in each of the black spaces below before clicking on it to display the answer.
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Question
Answer
Burst EDO (BEDO)   A variant on EDO DRAM in which read or write cycles are batched in bursts of four.  
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CAS Latency (CL)   The delay time between the moment a memory controller tells the CAS Latency (CL) memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins.  
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C-RIMM (Continuity RIMM)   an inexpensive pass through module that allows for a continuous signal for computers with C-RIMM memory.  
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DDR2   DDR2 memory can send data on both the rising and falling edges of the processor's clock cycles.  
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DDR3   DDR3 is a modern kind of dynamic random access memory (DRAM) with a high bandwidth interface, and has been in use since 2007  
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Direct Rambus DRAM   One of the two main competing standards to replace SDRAM is called Direct Rambus DRAM or DRDRAM  
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Double Data Rate SDRAM   Double Data Rate SDRAM is a class of memory integrated circuits used in computers  
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DDR SDRAM   DDR SDRAM is a class of memory integrated circuits used in computers  
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double-sided   double sided  
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dual channels   dual channel refers to the DDR or DDR2 chipset on certain motherboards designed with two memory channels instead of one.  
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dual ranked   dual ranked  
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dynamic RAM (DRAM)   Dynamic RAM is a type of RAM that only holds its data if it is continuously accessed ... If this is not done regularly, then the DRAM will lose its contents  
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ECC (error-correcting code)   ECC is used to verify data transmissions by locating and correcting transmission errors.  
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EDO (extended data out)   EDO is a modified form of Fast Page Mode (FPM) memory  
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FPM (fast page memory)   FPM is slightly faster than conventional DRAM.  
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