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Burst EDO (BEDO) A variant on EDO DRAM in which read or write cycles are batched in bursts of four.
CAS Latency (CL) The delay time between the moment a memory controller tells the CAS Latency (CL) memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins.
C-RIMM (Continuity RIMM) an inexpensive pass through module that allows for a continuous signal for computers with C-RIMM memory.
DDR2 DDR2 memory can send data on both the rising and falling edges of the processor's clock cycles.
DDR3 DDR3 is a modern kind of dynamic random access memory (DRAM) with a high bandwidth interface, and has been in use since 2007
Direct Rambus DRAM One of the two main competing standards to replace SDRAM is called Direct Rambus DRAM or DRDRAM
Double Data Rate SDRAM Double Data Rate SDRAM is a class of memory integrated circuits used in computers
DDR SDRAM DDR SDRAM is a class of memory integrated circuits used in computers
double-sided double sided
dual channels dual channel refers to the DDR or DDR2 chipset on certain motherboards designed with two memory channels instead of one.
dual ranked dual ranked
dynamic RAM (DRAM) Dynamic RAM is a type of RAM that only holds its data if it is continuously accessed ... If this is not done regularly, then the DRAM will lose its contents
ECC (error-correcting code) ECC is used to verify data transmissions by locating and correcting transmission errors.
EDO (extended data out) EDO is a modified form of Fast Page Mode (FPM) memory
FPM (fast page memory) FPM is slightly faster than conventional DRAM.
Created by: kevin92995
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