Monash Uni Course
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| Describe the Oxidation process | Individual atoms from surrounding environment penetrate the surface of the substrate and a thin layer is formed
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| What temperatures do oxidation processes operate at? | 700 degrees
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| Oxidation depends on which rates? | Chemical reaction at the interface, & diffusion of the oxidant through existing oxide layer
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| Types of Chemical Vapour Deposition? | Low Pressure CVD (LPCVD), Plasma Enhanced (PECVD)
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| Physical Deposition (Sputtering) | atoms ejected from a solid due to bombardment, high pressure
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| Physical Deposition (Evaporation) | Metal source heated to melting, atoms transported with the vapor to the substrate, 1nm/min
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| Chemical Deposition Process | Reactant comes to surface, adsorption at surface, reaction, desorption, transport of by product
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| LPCVD Benefits | Control unwanted gas-phase reactions, improve film uniformity,minimise diffusion effects
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| LPCVD Downsides | Can take 3hrs for 15nm, only 3 mins for deposition but the rest for controlling temperature and pressure
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| PECVD Benefits | Faster than LPCVD,Lower temps are good for components with low melting temp.
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| PECVD Downsides | Film quality is not as good
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| Stress in deposited films is caused by | Lattice mismatch, differences in thermal expansion coefficients
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| Photolithography - Preperation before coating | Clean wafer, apply primer, rotate, soft bake, exposure and post bake
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| Photolithography - Exposure Methods | Contact, Proximity, Projection
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| Types of Etching | Physical (plasma etching), Chemical (wet etching)
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| Wet etchant to remove Si isotropically | KOH or TMAH (tetra methyl amonium hydroxide)
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| Wet etchant to remove SiN (but not Si or SiO2) | H3PO4
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| Isotropically etch SiO2? | HF
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