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Micro/Nano Solids

Monash Uni Course

QuestionAnswer
Describe the Oxidation process Individual atoms from surrounding environment penetrate the surface of the substrate and a thin layer is formed
What temperatures do oxidation processes operate at? 700 degrees
Oxidation depends on which rates? Chemical reaction at the interface, & diffusion of the oxidant through existing oxide layer
Types of Chemical Vapour Deposition? Low Pressure CVD (LPCVD), Plasma Enhanced (PECVD)
Physical Deposition (Sputtering) atoms ejected from a solid due to bombardment, high pressure
Physical Deposition (Evaporation) Metal source heated to melting, atoms transported with the vapor to the substrate, 1nm/min
Chemical Deposition Process Reactant comes to surface, adsorption at surface, reaction, desorption, transport of by product
LPCVD Benefits Control unwanted gas-phase reactions, improve film uniformity,minimise diffusion effects
LPCVD Downsides Can take 3hrs for 15nm, only 3 mins for deposition but the rest for controlling temperature and pressure
PECVD Benefits Faster than LPCVD,Lower temps are good for components with low melting temp.
PECVD Downsides Film quality is not as good
Stress in deposited films is caused by Lattice mismatch, differences in thermal expansion coefficients
Photolithography - Preperation before coating Clean wafer, apply primer, rotate, soft bake, exposure and post bake
Photolithography - Exposure Methods Contact, Proximity, Projection
Types of Etching Physical (plasma etching), Chemical (wet etching)
Wet etchant to remove Si isotropically KOH or TMAH (tetra methyl amonium hydroxide)
Wet etchant to remove SiN (but not Si or SiO2) H3PO4
Isotropically etch SiO2? HF
Created by: 555608641
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