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Micro/Nano Solids Test

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1.
Photolithography - Exposure Methods
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2.
Types of Chemical Vapour Deposition?
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3.
Wet etchant to remove Si isotropically
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4.
Photolithography - Preperation before coating
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5.
Oxidation depends on which rates?
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6.
Physical Deposition (Evaporation)
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7.
Stress in deposited films is caused by
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8.
Describe the Oxidation process
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9.
Physical Deposition (Sputtering)
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10.
Chemical Deposition Process
A.
Chemical reaction at the interface, & diffusion of the oxidant through existing oxide layer
B.
Reactant comes to surface, adsorption at surface, reaction, desorption, transport of by product
C.
Individual atoms from surrounding environment penetrate the surface of the substrate and a thin layer is formed
D.
Lattice mismatch, differences in thermal expansion coefficients
E.
atoms ejected from a solid due to bombardment, high pressure
F.
Low Pressure CVD (LPCVD), Plasma Enhanced (PECVD)
G.
Clean wafer, apply primer, rotate, soft bake, exposure and post bake
H.
Contact, Proximity, Projection
I.
Metal source heated to melting, atoms transported with the vapor to the substrate, 1nm/min
J.
KOH or TMAH (tetra methyl amonium hydroxide)
Type the Answer that corresponds to the displayed Question.
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11.
Wet etchant to remove SiN (but not Si or SiO2)
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12.
What temperatures do oxidation processes operate at?
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13.
Film quality is not as good
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14.
HF
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15.
Can take 3hrs for 15nm, only 3 mins for deposition but the rest for controlling temperature and pressure
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16.
Control unwanted gas-phase reactions, improve film uniformity,minimise diffusion effects
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17.
Physical (plasma etching), Chemical (wet etching)
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18.
Faster than LPCVD,Lower temps are good for components with low melting temp.

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