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aplus chapter 7
terms
| Question | Answer |
|---|---|
| Burst EDO BEDO | memory that is stored on 168-pim DIMM modules |
| CAS Latency column access strobe | a method of measuring access time to memory, which is the number of clock cycles required to write or read a column of data off a memory module |
| C-RIMM continuity rimm | a placeholder RIMM module that provides continuity so that every RIMM slot is filled.has no memory |
| DDR double data rate | a computer bus that transfers data on both the rising and falling edges of the clock signal[1]. This is also known as double pumped, dual-pumped, and double transition. |
| DDR2 | memory can send data on both the rising and falling edges of the processors clock cycles. |
| DDR3 | has the ability to transfer data at twice the rate,eight times the speed of its internal memory arrays,enabling higher bandwith or peak data rates |
| direct rambius DRAM | memory technology by rambus and intel that uses a narrow network type system bus |
| direct RDRAM | |
| Double Data Rate SDRAM | a type of memory technology used on DIMMS that runs at twice the speed of the system clock |
| DDR SDRAM II | |
| double sided | a dimm feature whereby memory chips are installed on both sides of a dimm |
| dual channels | a motherboard feature that improves memory performance by providing two 64 bit channels between memory and the chipset |
| dual ranked | double sided dimms that provide two 64 bit banks.the memory controller accesses first one bank and thn the other. |
| error correcting code ECC | detects and corrects error in a single bit |
| extended data out EDO | simm technology |
| fast page memory FPM | simm technology |
| general protection fault GPF | a windows error that occurs when a program attempts to access a memory address that is no longer available or is no longer assigned to it |
| memory bank | the memory a processor address at one time |
| parity | an error checking scheme in which a ninth or parity bit is added.value is either one or zero |
| parity error | an error that occurs when the number of ones in the byte is not in agreement with the expected number |
| Rambus | |
| RAS latency row access strobe | a method of measuring access timing to memory,which is the number of clock cycles required to write or read a row of data off a memory module |
| RDRAM | |
| re-marked chips | chips that have been used and returned to the factory,marked again and resold |
| RIMM | a type of memory module developed by Rambius |
| SIMM single inline memory module | a minitature circuit board used in older computers to hold ramm |
| single channel | the memory controller on a motherboard that can access only one dimm at a time |
| single ranked | dimms that provide only one 64 bit bank.all memory chips on the dimm are accessed at the same time |
| single sided | memory chips embedded on only a ssingle side of a dimm |
| SO-DIMM small outline DIMM | a type of memory module used in notebook computers that uses dimm technology |
| synchronous DRAM SDRAM | a type of memory stored on dimms that runs in sync with the system clock ,running the same speed as the motherboard |
| triple channels | when the memory controller accesses three dimms at the same time. |
| DIMM | a miniature circuit board installed on a motherboard to hold memory |
| SRAM | ram chips that retain information without the need for refreshing as long as the computers power is on |
| ddr | one notch 184 pins |
| sdram | two notches 168 pins |
| ddr2 | 240 pins notch in different location |
| ddr3 | 240 pins notch in different location |
| sram | used in processor memory caches |
| sdram | used on dimms |
| dimms | 64 bit data path |
| dimm | independent pins on opposite sides of the module |
| synchronized memory | runs in step with the processor and system clock and speeds measured in megahertz |
| ddr ram | it processes data when the beat rises and again when it falls,doubling the data rate of memory |
| single dimm | provide one memory bank to the processor 64 bit |
| double sided | refers to thhe physical location of the chips on the dimm |
| dual ranked | refers to how the memory on the dimm is addressed |
| double sided dimm | provide more then one bank,means the chips on the dimm are grouped so memory controller addresses one side and then the other |
| quad rank dimms | dimms that provide four banks,mostly on servers |
| siding | physical location |
| ranking | how it is adressed |
| ddr3 | permits chip capacities of up to 8 gigabytes |
| dual channels | double the speed of memory access |
| dimm speeds | measured in Mhz or PC rating |
| pc rating | measure of the total bandwith of data moving between the module and the cpu |
| pc rating | multiply bytes times megahertz |
| error correcting code | ram used in a server |
| ecc | detects and corrects in a single bit |
| ecc | can detect but not correct in two bits |
| parity error | always cayses the system to halt |
| even parity | number of ones to be even |
| odd parity | number of ones to be odd |
| buffers | hold data and amplify a signal just before the data is written to the module |
| registers | hold data and amplify a signal just before the data is written to the module |
| unbuffered dimm | doesnt support registers or buffers |
| position of notch on the left | identifies the module as registered,buffered,or unbuffered memory |
| notch on the right | identifies the voltage used by the module |
| cas latency | used more then ras latency;lower values better then higher ones |
| rimm | two notches and 184 pins |
| rimm | single notch and 232 pins |
| simm | rated by speed measured in nanoseconds |
| access time | the time it takes for the processor to request the data,for the memory controller to locate the data on the simm and |
| memory performance factors | total ram installed;memory technology;memory speed |
| latency | clock cycles |