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Ch7-St1

QuestionAnswer
Burst EDO (BEDO) is a newer EDO DRAM that is capable of processing four memory addresses in one burst. (BEDO)
CAS Latency (CL) is the delay time between the moment a memory controller tells the memory module to access a particular memory (CL)
C-RIMM (Continuity RIMM) is an inexpensive pass through module that allows for a continuous signal for computers with RIMM memory (Continuity RIMM)
DDR2 is a double data rate synchronous dynamic random-access memory interface. It supersedes the original DDR SDRAM specification and has itself been superseded by DDR2
DDR3 is a modern kind of dynamic random access memory (DRAM) with a high bandwidth interface, and has been in use since DDR3
Direct Rambus DRAM is a type of synchronous dynamic direct rambusDRAM
Double Data Rate SDRAM can theoretically improve memory access speed to at least 200 MHz Double Data Rate SDRAM
DDR SDRAM is a class of memory integrated circuits used in computers DDR SDRAM
double-sided documents from a computer with WINDOWS OS using the duplexer double sided
dual channels is being misused by some in the memory industry, which can mislead the consumer. The fact is there's no such thing as dual-channel memory dual channels
dual ranked is a set of DRAMs connected to the same chip select, and which are therefore accessed simultaneously dual ranked
dynamic RAM (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit dynamic
ECC (error-correcting code) are techniques that enable reliable delivery of digital data over unreliable communication channels ecc
EDO (extended data out) is a type of random access memory (RAM) chip that improves the time to read from memory on faster microprocessors such as the Intel Pentium edo
FPM (fast page memory) row access strobe (RAS) signal is kept active while the column access strobe (CAS) signal changes to read a sequence of contiguous memory cells fpm
Created by: Dgrobelny