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Burst EDO (BEDO)Answer
CAS Latency (CL) the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module
C-RIMM (Continuity RIMM) an inexpensive pass through module that allows for a continuous signal for computers with RIMM memory.
DDR2 a double data rate synchronous dynamic random-access memory interface.
DDR3 an abbreviation for double data rate type three synchronous dynamic random access memory, is a modern kind of dynamic random access memory (DRAM) with a high bandwidth interface, and has been in use since 2007.
Direct Rambus DRAM One of the two main competing standards to replace SDRAM
Double Data Rate SDRAM a class of memory integrated circuits used in computers.
DDR SDRAM is synchronous dynamic RAM (SDRAM) that can theoretically improve memory clock speed to at least 200 MHz
double-sided A magnetic or optical disc that is recorded on both sides.
dual channels refers to the DDR or DDR2 chipset on certain motherboards designed with two memory channels instead of one.
dual ranked a modern DIMM that consists of two ranks
dynamic RAM (DRAM) type of RAM that only holds its data if it is continuously accessed by special logic called a refresh circuit.
ECC (error-correcting code) allows data that is being read or transmitted to be checked for errors and, when necessary, corrected on the fly.
EDO (extended data out) a type of random access memory (RAM) chip that improves the time to read from memory on faster microprocessors such as the Intel Pentium.
FPM (fast page memory) was the most common kind of DRAM in personal computers.
Burst EDO (BEDO) is a newer EDO DRAM that is capable of processing four memory addresses in one burst.
Created by: 13rhaughney