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wf ch7 stack1
Question | Answer |
---|---|
Burst EDO (BEDO) | A refined version of EDO memory that significantly improved access time over EDO. |
CAS Latency (CL) | A method of measuring access timing to memory, which is the number of clock cycles required to write or read a column of data off a memory module. |
C-RIMM (Continuity RIMM) | A placeholder RIMM module that provides continuity so that every RIMM slot is filled. |
DDR2 | A version of SDRAM that is faster than DDR and uses less power. |
DDR3 | A version of SDRAM that is faster than DDR2 memory and that can use triple channels |
Direct Rambus DRAM | A memory technology by Rambus and Intel that uses a narrow network-type system bus. |
Double Data Rate SDRAM | A type of memory technology used on DIMMs that runs at twice the speed of the system clock |
DDR SDRAM | A type of memory technology used on DIMMs that runs at twice the speed of the system clock |
double-sided | A DIMM feature whereby memory chips are installed on both sides of a DIMM |
dual channels | A motherboard feature that improves memory performance by providing two 64-bit channels between memory and the chipset. |
dual ranked | Double-sided DIMMs that provide two 64-bit banks. |
dynamic RAM (DRAM) | The most common type of system memory, it requires refreshing every few milliseconds |
ECC (error-correcting code) | A chipset feature on a motherboard that checks the integrity of data stored on DIMMs or RIMMs and correct single-bit errors in a byte. |
EDO (extended data out) | A type of outdated RAM that was faster than conventional RAM because it eliminated the delay before it issued the next memory address |
FPM (fast page memory) | An outdated memory mode used before the introduction of EDO memory. |