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bm ch7 stack 1
| Question | Answer |
|---|---|
| Burst EDO | A refined version of EDO memory that significantly improved access time over EDO. |
| CAS Latency | A method of measuring access timing to memory, which is the number of clock cycles required to write or read a column of data off a memory module. |
| C-RIMM | A placeholder RIMM module that provides continuity so that every RIMM slot is filled. |
| DDR2 | A version of SDRAM that is faster than DDR. |
| DDR3 | A version of SDRAM that is faster than DDR2 |
| Direct Rambus DRAM | A memory technology by Rambus and Intel that uses narrow network type. |
| Double Data Rate SDRAM | A type of memory technology used on DIMMs that runs at twice the speed of the system clock. |
| DDR SDRAM | A version of SDRAM that is faster than DDR and uses less power. |
| double-sided | A DIMM feature whereby memory chips are installed on both sides of the DIMM. |
| dual channels | A motherboard feature that improves memory performance by providing two 64 bit channels between ,e,pry and the chipset. |
| dual ranked | Double sided DIMMs that provide two 64 bit banks. |
| dynamic RAM | The most common type of system memory. |
| ECC | Error correcting code. |
| EDO | Extended data out. |
| FPM | Fast page memory. |
Created by:
bmorrissey
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