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mg Ch. 7 Stack 1

Ch. 7 Stack 1

Burst EDO (BEDO) refined version of EDO memory that significantly improved access time over EDO.
CAS Latency (CL) method of measuring access timing to memory, which is the number of clock cycles(cl) required to write or read a column of data off a memory module.
C-RIMM (Continuity RIMM) a placeholder RIMM module that provides continuity so that every cRIMM slot is filled
DDR2 a double data rate synchronous dynamic random-access memory interface
DDR3 double data rate type three synchronous dynamic random access memory, is a modern kind of dynamic random access memory (DRAM) with a high bandwidth interface
Direct Rambus DRAM a memory technology by Rambus and Intel that uses a narrow network-type system bus
Double Data Rate SDRAM a type of memory technology used on DIMMs that runs at twice the speed of the system clock
DDR SDRAM a versin of SDRAM that is faster than DDR and uses less power
double-sided a DIMM feature whereby memory chips are installed on both sides of a DIMM
dual channels a motherboard feature that improves memory performance by providing two 64-bit channels between memory and the chipset
dual ranked double-sided DIMMs that provide that provide two 64-bit banks
dynamic RAM (DRAM) the most common type of system memory, it requires refreshing every few milliseconds
ECC (error-correcting code) a chipset feature on a motherboard that checks the integrity of data stored on DIMMs or RIMMs and can correct single-bit errors in a byte
EDO (extended data out) a type of outdated RAM that was faster than conventional RAM because it eliminated the delay before it issued the next memory address
FPM (fast page memory) an outdated memory mode used before the introduction of EDO memory
Created by: mgentner