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TermDefinition
Burst EDO (BEDO) A refined version of EDO memory that significantly improved access time over Burst EDO.
CAS Latency (CL) A method of measuring access timing to memory, which is the number of clock cycles required to write or read a column of data off a memory module (CL).
C-RIMM (Continuity RIMM) A placeholder RIMM module that provides continuity so that every RIMM slot is filled is C-RIMM.
DDR2 A version of SDRAM that is faster then DDR and uses less power.
DDR3 A version of SDRAM that i8s faster than DDR2 memory and that can use triple channels.
Direct Rambus DRAM A memory technology by Rambus and Intel that uses a narrow network-type system bus, (DRAM).
Double Data Rate SDRAM A type of memory technology used on DIMMs that runs at twice the speed of the system clock is the double data rate.
DDR SDRAM DDR SDRAM is a type of memory technology used on DIMMs that runs at twice the speed of the system clock.
double-sided A DIMM feature whereby memory chips are installed on both sides of a DIMM.
dual channels A motherboard feature that improves memory performance by providing two 64-bit channels between memory and the chip set.
dual ranked Double sided DIMMs that provide two 64 bit-banks are dual ranked.
dynamic RAM (DRAM) Dynamic RAM Looses its data rapidly and the memory controller must refresh it several 1000 times a second.
ECC (error-correcting code) ECC is a chip set feature on a motherboard that checks the integrity of data stored on DIMMs or RIMMs.
EDO (extended data out) EDO is improved on FPM and used on 72-pin SIMMs.
FPM (fast page memory) FPM can be used with 30-pin or 72-pin SIMMs or some old 168-pin DIMMs.
Created by: Michael Miller