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Chapter 7 stack 1

TermDefinition
Burst EDO (BEDO) A refined version of EDO memory that significantly improved access time over EDO.
CAS Latency (CL) A method of measuring access timing to memory, which is the number of clock cycles required to write or read a column of data off a memory module.
C-RIMM (Continuity RIMM) A placeholder RIMM module that provides continuity so that every RIMM slot is filled.
DDR2 A version of SDRAM that is faster then DDR and uses less power.
DDR3 A version of SDRAM that is faster than DDR2 memory and that can use triple channels.
Direct Rambus DRAM A memory technology by Rambus and Intel that uses a narrow network-type system bus
Double Data Rate SDRAM A type of memory technology used on DIMMs that runs at twice the speed of the system clock.
DDR SDRAM A type of memory technology used on DIMMs that runs at twice the speed of the system clock. DDR
double-sided A DIMM feature whereby memory chips are installed on both sides of a DIMM.
dual channels A motherboard feature that increases memory performance.
dual ranked Double-sided DIMMs that provide two 64-bit banks.
dynamic RAM (DRAM) The most common type of system memory, it requires refreshing every few milliseconds.
ECC (error-correcting code) A chipset feature on a motherboard that checks the integrity of data stored on DIMMs or RIMMs and can correct single-bit errors in a byte.
EDO (extended data out) A type of outdated RAM that was faster than conventional RAM because it eliminated the delay before it issued the next memory address.
FPM (fast page memory) An outdated memory mode used before the introduction of EDO memory.
Created by: 13rmccammitt
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