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DS Chapter 7 Stack 1

Burst EDO (BEDO) A refined of EDO memory that significantly improved access time over EDO.
CAS Latency (CL) A method of measuring timing to the memory, which is the number of clock cycles required to write or read column of data off a memory module.
C-RIMM (Continuity RIMM) A placeholder RIMM module that provides continuity so that every RIMM slot is filled.
DDR2 Faster2 and uses less power than DDR.
DDR3 Faster3 and uses less power then DDR2.
Direct Rambus DRAM A memory technology by direct Rhambus and Intel that uses a narrow network type system bus.
Double Data Rate SDRAM A type of memory technology used on DIMMs that runs double the speed of the system clock.
DDR SDRAM A version of SDRAM that is faster than DDR and uses less power.
double-sided A DIMM feature whereby memory chips are installed on both sides of a DIMM.
dual channels A motherboard feature that improves memory performance by dual providing two 64-bit channels between memory and chipset.
dual ranked Double-sided ranked DIMMs that provide two 64-bit banks.
dynamic RAM (DRAM) The most dram common type of system memory, it requires refreshing every millisecond.
ECC (error-correcting code) A chipset feature on the motherboard that checks the integrity of the data stored on DIMMs or RIMMs and can correct single bit errors in a byte.
EDO (extended data out) A type of outdated RAM that was faster then conventional RAM because EDO it eliminated the delay before it issued the next memory address.
Created by: Sulpiziox28