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DS Chapter 7 Stack 1
| Term | Definition |
|---|---|
| Burst EDO (BEDO) | A refined of EDO memory that significantly improved access time over EDO. |
| CAS Latency (CL) | A method of measuring timing to the memory, which is the number of clock cycles required to write or read column of data off a memory module. |
| C-RIMM (Continuity RIMM) | A placeholder RIMM module that provides continuity so that every RIMM slot is filled. |
| DDR2 | Faster2 and uses less power than DDR. |
| DDR3 | Faster3 and uses less power then DDR2. |
| Direct Rambus DRAM | A memory technology by direct Rhambus and Intel that uses a narrow network type system bus. |
| Double Data Rate SDRAM | A type of memory technology used on DIMMs that runs double the speed of the system clock. |
| DDR SDRAM | A version of SDRAM that is faster than DDR and uses less power. |
| double-sided | A DIMM feature whereby memory chips are installed on both sides of a DIMM. |
| dual channels | A motherboard feature that improves memory performance by dual providing two 64-bit channels between memory and chipset. |
| dual ranked | Double-sided ranked DIMMs that provide two 64-bit banks. |
| dynamic RAM (DRAM) | The most dram common type of system memory, it requires refreshing every millisecond. |
| ECC (error-correcting code) | A chipset feature on the motherboard that checks the integrity of the data stored on DIMMs or RIMMs and can correct single bit errors in a byte. |
| EDO (extended data out) | A type of outdated RAM that was faster then conventional RAM because EDO it eliminated the delay before it issued the next memory address. |
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